STACKED CARBON-BASED FETS

摘要

A stacked transistor device includes a lower transistor that has a lower channel layer formed on a substrate and lower source and drain regions formed directly over the lower channel layer. The lower source and drain regions are in electrical contact with respective conductive source and drain extensions formed in the substrate. An upper transistor has upper source and drain regions vertically aligned with the respective lower source and drain regions. The upper source and drain regions are separated from the respective lower source and drain regions by an insulator. The upper transistor further includes an upper channel layer formed over the upper source and drain regions.

主权项

1. A stacked transistor device, comprising:
a lower transistor, comprising a lower channel layer formed on a substrate and lower source and drain regions formed directly over the lower channel layer and in electrical contact with respective conductive source and drain extensions formed in the substrate; and an upper transistor, comprising upper source and drain regions vertically aligned with the respective lower source and drain regions and separated from said respective lower source and drain regions by an insulator and further comprising an upper channel layer formed over the upper source and drain regions.