| 发明名称 |
SEMICONDUCTOR APPARATUS |
| 摘要 |
A voltage generation circuit of a semiconductor apparatus includes a first detection block configured to detect an output voltage and output a first detection signal; a second detection block configured to detect the output voltage and output a second detection signal; a signal generation block configured to generate a control signal in response to the first detection signal and the second detection signal; and a voltage generation block configured to generate the output voltage in response to the control signal, wherein responding speeds of the first detection block and the second detection block with respect to a variation in the output voltage are different. |
| 申请公布号 |
US2015185745(A1) |
申请公布日期 |
2015.07.02 |
| 申请号 |
US201414242994 |
申请日期 |
2014.04.02 |
| 申请人 |
SK hynix Inc. |
发明人 |
KIM Jong Sam |
| 分类号 |
G05F1/46;G05F1/613;G01R19/00 |
主分类号 |
G05F1/46 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A voltage generation circuit of a semiconductor apparatus, comprising:
a first detection block configured to detect an output voltage and output a first detection signal; a second detection block configured to detect the output voltage and output a second detection signal; a signal generation block configured to generate a control signal in response to the first detection signal and the second detection signal; and a voltage generation block configured to generate the output voltage in response to the control signal, wherein responding speeds of the first detection block and the second detection block with respect to a variation in the output voltage are different. |
| 地址 |
Icheon-si Gyeonggi-do KR |
