| 发明名称 |
POWER SEMICONDUCTOR DEVICE |
| 摘要 |
A power semiconductor device may include: an active region in which a current flows through a channel formed when the device being turned on; a termination region disposed around the active region; a first semiconductor region of a first conductive type disposed in the termination region in a direction from the active region to the termination region; and a second semiconductor region of a second conductive type disposed in the termination region in the direction from the active region to the termination region, the first semiconductor region and the second semiconductor region being disposed alternately. |
| 申请公布号 |
US2015187868(A1) |
申请公布日期 |
2015.07.02 |
| 申请号 |
US201414243873 |
申请日期 |
2014.04.02 |
| 申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
PARK Jae Hoon;KIM Ji Hye;MO Kyu Hyun;SEO Dong Soo;SONG In Hyuk |
| 分类号 |
H01L29/06;H01L29/10;H01L29/739 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power semiconductor device, comprising:
an active region in which a current flows through a channel formed when the device being turned on; a termination region disposed around the active region; a first semiconductor region of a first conductive type disposed in the termination region in a direction from the active region to the termination region; and a second semiconductor region of a second conductive type disposed in the termination region in the direction from the active region to the termination region, the first semiconductor region and the second semiconductor region being disposed alternately. |
| 地址 |
Suwon-Si KR |
