SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

An object is to provide an antifuse with little power consumption at the time of writing. The antifuse is used for a memory element in a read-only memory device. The antifuse includes a first conductive layer, a multilayer film of two or more layers in which an amorphous silicon film and an insulating film are alternately stacked over the first conductive layer, and a second conductive layer over the multilayer film. Voltage is applied between the first and second conductive layers and resistance of the multilayer film is decreased, whereby data is written to the memory element. When an insulating film having higher resistance than amorphous silicon is formed between the first and second conductive layers, current flowing through the antifuse at the time of writing is reduced.

主权项

1. A method for manufacturing a semiconductor device comprising a plurality of memory cells each comprising an antifuse, wherein the antifuse comprises a first conductive layer, a second conductive layer, and an intermediate layer interposed between the first conductive layer and the second conductive layer, comprising:
forming the first conductive layer; forming a semiconductor film of the intermediate layer so as to be in contact with an upper surface of the first conductive layer; forming an insulating film of the intermediate layer so as to be in contact with the semiconductor film of the intermediate layer; and forming the second conductive layer so as to be in contact with an upper surface of the insulating film of the intermediate layer, wherein the first conductive layer is formed of a conductive material containing an element selected from the group consisting of Ti, W, Ni, Cr, Mo, Ta, Co, Zr, V, Pd, Hf, Pt, and Fe.