Semiconductor device and manufacturing method thereof

摘要

A semiconductor device including a substrate, a heterojunction body, a passivation layer, a source contact, a drain contact, and a gate contact. The heterojunction body disposed on or above the substrate includes a first semiconductor layer, a mask layer, a regrowth layer, and a second semiconductor layer. The first semiconductor layer is disposed on or above the substrate. The mask layer is disposed on or above a portion of the first semiconductor layer. The regrowth layer disposed on the first semiconductor layer and adjacent to the mask layer includes a main portion and at least one inclined portion. The second semiconductor layer is disposed on the mask layer and the regrowth layer. The passivation layer is disposed on the second semiconductor layer. The gate contact is disposed on the passivation layer, between the source contact and the drain contact, and at least above the inclined portion of the regrowth layer.

主权项

1. A semiconductor device, comprising:
a substrate; a heterojunction body disposed on or above the substrate, the heterojunction body comprising:
a first semiconductor layer disposed on or above the substrate;a mask layer disposed on or above a portion of the first semiconductor layer;a regrowth layer disposed on the first semiconductor layer and to adjacent to the mask layer, the regrowth layer comprising a main portion and at least one inclined portion, each of the main portion and the inclined portion having a top surface, wherein the mask layer has a bottom surface facing the first semiconductor layer, the top surface of the main portion and the bottom surface of the mask layer are non-coplanar, and the top surface of the inclined portion slopes at an angle between the top surface of the main portion and the bottom surface of the mask layer; anda second semiconductor layer disposed on the mask layer and the regrowth layer, a passivation layer disposed on the second semiconductor layer and at least above the mask layer and the inclined portion of the regrowth layer; a source contact and a drain contact respectively electrically coupled with the heterojunction body; and a gate contact disposed on the passivation layer, between the source contact and the drain contact, and at least above the inclined portion of the regrowth layer.