发明名称 Reference voltage generators, integrated circuits, and methods for operating the reference voltage generators
摘要 A reference voltage generator is described. The reference voltage generator includes a proportional to absolute temperature (PTAT) current source, the PTAT current source being capable of providing a first current that is proportional to a temperature. The reference voltage generator further includes a current mirror comprising a first transistor and a second transistor, the current mirror configured to generate a second current proportional to the first current, wherein a ratio of the first current to the second current is equal to a ratio of a gate width of the first transistor to a gate width of the second transistor. The reference voltage generator further includes a voltage divider, the voltage divider being capable of receiving the second current, the voltage divider capable of outputting a reference voltage, the reference voltage being substantially independent from a change of the temperature.
申请公布号 US9069367(B2) 申请公布日期 2015.06.30
申请号 US201213693454 申请日期 2012.12.04
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 Nag Dipankar;Jou Chewn-Pu
分类号 G05F3/08;G05F3/16;G05F3/30 主分类号 G05F3/08
代理机构 Lowe Hauptman & Ham, LLP 代理人 Lowe Hauptman & Ham, LLP
主权项 1. A reference voltage generator comprising: a proportional to absolute temperature (PTAT) current source, the PTAT current source being capable of providing a first current that is proportional to a temperature; a current mirror comprising a first transistor and a second transistor, the current mirror configured to generate a second current proportional to the first current, wherein a ratio of the first current to the second current is equal to a ratio of a gate width of the first transistor to a gate width of the second transistor; and a voltage divider, the voltage divider being capable of receiving the second current, the voltage divider capable of outputting a reference voltage, the reference voltage being substantially independent from a change of the temperature, wherein the voltage divider comprises a first diode-connected transistor and a second diode-connected transistor, and the reference voltage is capable of being adjusted based on width/length ratios of the first diode-connected transistor and the second diode-connected transistor, wherein the PTAT current source is further capable of providing a third current that is proportional to the first current.
地址 TW