ELECTRODE STRUCTURE FOR NITRIDE SEMICONDUCTOR DEVICE, PRODUCTION METHOD THEREFOR, AND NITRIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

摘要

According to an electrode structure of an embodiment of the invention, an ohmic electrode is provided from recess to a surface of an insulating film without being in contact with the surface of the nitride semiconductor multilayer body, so that the insulating film covers the surface of the AlGaN barrier layer. Accordingly, during the formation process of the ohmic electrode by dry etching, the surface of the nitride semiconductor multilayer body can be protected by the insulating film.