发明名称 由钌错合物所构成的化学蒸镀原料及其制造方法和化学蒸镀法;RAW MATERIALS FOR CHEMICAL VAPOR DEPOSITION COMPRISING RUTHENIUM COMPLEX, PRODUCTION METHOD THEREOF AND CHEMICAL VAPOR DEPOSITION METHOD
摘要 本发明系提供一种化学蒸镀用原料,该原料由钌错合物所构成,在用于藉由化学蒸镀法制造钌薄膜或钌化合物薄膜的原料中,前述钌错合物为下述式所示,系钌经配位羰基及多烯之氟烷基衍生物者。本发明系提供具有适合的分解温度、制造成本也低廉之由钌错合物所构成的化学蒸镀用原料:(nR-L)Ru(CO)3(式中,L为碳数4至8之具有2至4个双键的多烯。多烯L具有n个(n≧1)取代基R,取代基R为碳数1至6之氟数1至13的氟烷基。多烯L具有2个以上的取代基R时(n≧2),取代基R的碳数与氟数于同一分子中亦可不同。) Raw materials for chemical vapor deposition, which have a preferable temperature of decomposition, inexpensive to produce and comprised of ruthenium complex. The raw materials for chemical vapor deposition are used for producing ruthenium thin films or ruthenium compound thin films by a chemical vapor deposition method, and as shown in the following formula, the ruthenium complex has carbonyl group and fluoroalkyl derivative of polyene coordinated with ruthenium. [Formula 1] (nR-L) Ru (CO)3(In the formula, L is polyene having a carbon number of 4 to 8 and having 2 to 4 double bonds. The polyene L has n numbers (n≧1) of substituent group R, which is fluoroalkyl group having a carbon number of 1 to 6 and having a fluorine number of 1 to 13. When the polyene L has two or more substituent groups R (n≧2), the substituent groups may have a different carbon number and a fluorine number in the same molecule.)
申请公布号 TW201522695 申请公布日期 2015.06.16
申请号 TW104105784 申请日期 2013.08.15
申请人 田中贵金属工业股份有限公司 TANAKA KIKINZOKU KOGYO K. K. 发明人 原田了辅 HARADA, RYOSUKE;中田直希 NAKATA, NAOKI;斋藤昌幸 SAITO, MASAYUKI
分类号 C23C16/16(2006.01);C07F15/00(2006.01);C23C16/448(2006.01) 主分类号 C23C16/16(2006.01)
代理机构 代理人 洪澄文
主权项
地址 日本 JP