RRAM INCLUDING RESISTANCE-VARIABLE LAYER AND RRAM-BASED SYNAPTIC ELECTRONICS

摘要

The present invention relates to a PRAM including a variable resistance layer and an electronic device with an improved synaptic property including the same. The PRAM according to the present invention includes a first metal layer, a PCMO layer which is located on the first metal layer, a titanium nitride layer which is located on the PCMO layer and is in direct contact with the PCMO layer, a variable resistance layer which is located on the titanium nitride layer, and a second metal layer which is located on an aluminum oxide layer.