| 主权项 |
1. A power semiconductor device comprising:
a housing with first and second housing parts, said first housing part having a first cutout, said first and second housing parts being configured to form an opening in said housing through said first cutout, said opening having lateral first and second ends; an electrically conductive load terminal element for permitting electrical contact with the power semiconductor device, said electrically conductive load terminal element having an external terminal section arranged outside said housing, an internal terminal section arranged inside said housing and a feedthrough section pressing through said opening, said feedthrough section having first and second outer edges, and first and second outer edge regions; a first sealing element having a first section which is arranged between said first housing part and said feedthrough section; and a second sealing element having a first section which is arranged between said second housing part and said feedthrough section; wherein said first and second sealing elements contact one another laterally from said first and second outer edges of said feedthrough section; wherein said first outer edge region tapers laterally in the direction of said first outer edge and said second outer edge region tapers laterally in the direction of said second outer edge; and wherein said first and second outer edge regions are disposed so as to face away from one another, said first outer edge is arranged proximate said lateral first end of said opening and said second outer edge is arranged proximate said lateral second end of said opening. |
