METHOD FOR EVALUATING OXIDE SEMICONDUCTOR THIN FILM, METHOD FOR MANAGING QUALITY OF OXIDE SEMICONDUCTOR THIN FILM, AND EVALUATION ELEMENT AND EVALUATION DEVICE USED IN ABOVE EVALUATION METHOD

摘要

The present invention provides a method for accurately and easily measuring, and evaluating/predicting/estimating the electrical resistance of an oxide semiconductor thin film, and a method for managing the quality of an oxide semiconductor. The method for evaluating an oxide semiconductor thin film according to the present invention includes: a first step for irradiating, with excitation light and microwaves, a sample on which an oxide semiconductor thin film is formed, measuring the maximum value of the reflected waves produced by reflection of the microwaves by the oxide semiconductor thin film which changes due to the excitation light irradiation, then stopping the excitation light irradiation and measuring the change in reflectivity with regards to the reflected waves produced by reflection of the microwaves by the oxide semiconductor thin film after the excitation light irradiation has stopped; and a second step for calculating a parameter corresponding to the slow decay observed after the excitation light irradiation has stopped from the change in reflectivity and evaluating the electrical resistivity of the oxide semiconductor thin film.