发明名称 Curved wafer processing on method and apparatus
摘要 An apparatus for and a method of forming a semiconductor structure is provided. The apparatus includes a substrate holder that maintains a substrate such that the processing surface is curved, such as a convex or a concave shape. The substrate is held in place using point contacts, a plurality of continuous contacts extending partially around the substrate, and/or a continuous ring extending completely around the substrate. The processing may include, for example, forming source/drain regions, channel regions, silicides, stress memorization layers, or the like.
申请公布号 US9054188(B2) 申请公布日期 2015.06.09
申请号 US201213404819 申请日期 2012.02.24
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chang I-Ming;Guo Wen-Huei;Chang Chih-Hao;Chang Shou-Zen;Wann Clement Hsingjen;Lee Tung Ying;Chen Cheng-Long;Huang Jui-Chien
分类号 H01L21/3205;H01L21/683;H01L21/687;H01L21/31;H01L29/78;H01L29/10;H01L29/66 主分类号 H01L21/3205
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A method of forming a semiconductor structure, the method comprising: providing a substrate; forming a recess in a processing surface of the substrate; curving the processing surface of the substrate; processing the substrate while the processing surface is curved, the processing comprising forming one or more components of a semiconductor element, the one or more components of the semiconductor element comprising a stress-inducing region in the recess; and relaxing the processing surface after the processing.
地址 Hsin-Chu TW