发明名称 |
Curved wafer processing on method and apparatus |
摘要 |
An apparatus for and a method of forming a semiconductor structure is provided. The apparatus includes a substrate holder that maintains a substrate such that the processing surface is curved, such as a convex or a concave shape. The substrate is held in place using point contacts, a plurality of continuous contacts extending partially around the substrate, and/or a continuous ring extending completely around the substrate. The processing may include, for example, forming source/drain regions, channel regions, silicides, stress memorization layers, or the like. |
申请公布号 |
US9054188(B2) |
申请公布日期 |
2015.06.09 |
申请号 |
US201213404819 |
申请日期 |
2012.02.24 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chang I-Ming;Guo Wen-Huei;Chang Chih-Hao;Chang Shou-Zen;Wann Clement Hsingjen;Lee Tung Ying;Chen Cheng-Long;Huang Jui-Chien |
分类号 |
H01L21/3205;H01L21/683;H01L21/687;H01L21/31;H01L29/78;H01L29/10;H01L29/66 |
主分类号 |
H01L21/3205 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A method of forming a semiconductor structure, the method comprising:
providing a substrate; forming a recess in a processing surface of the substrate; curving the processing surface of the substrate; processing the substrate while the processing surface is curved, the processing comprising forming one or more components of a semiconductor element, the one or more components of the semiconductor element comprising a stress-inducing region in the recess; and relaxing the processing surface after the processing. |
地址 |
Hsin-Chu TW |