发明名称 STRESS EVALUATION METHOD AND STRESS EVALUATION APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a stress evaluation method and a stress evaluation apparatus capable of accurately evaluating a stress that causes a strain in a semiconductor device or the other structure. ! SOLUTION: A first step of polishing or grinding a structure to form an end face, measuring a surface displacement of the end face, and acquiring a surface displacement image; and a second step of acquiring a structure image for discriminating a profile of constituent elements of the structure on the end face are repeatedly executed. A plurality of surface displacement images obtained by repetition of the first and second steps are reconstructed in three dimensions to generate a three-dimensional elastic deformation image, and a plurality of structure images are reconstructed in three dimensions to generate a structure model. Subsequently, a stress is virtually applied to a predetermined position of the structure model to calculate an elastic deformation distribution in an evaluation range, the stress
申请公布号 JP2015105866(A) 申请公布日期 2015.06.08
申请号 JP20130247792 申请日期 2013.11.29
申请人 FUJITSU LTD 发明人 SOEDA TAKESHI
分类号 G01L1/00;G06F17/50 主分类号 G01L1/00
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