POWER SEMICONDUCTOR DEVICE

摘要

The present disclosure relates to a power semiconductor device which includes: a first semiconductor layer of a first conductive type, a second semiconductor layer of the first conductive type which is formed on the upper side of the first semiconductor layer and has an impurity concentration which is higher than the impurity concentration of the first semiconductor layer, a third semiconductor layer of a second conductive type which is formed on the upper side of the second semiconductor layer, a fourth semiconductor layer of the first conductive type which is formed on the inner side of the upper side of the third semiconductor layer, a trench gate which passes through from the fourth semiconductor layer to a part of the first semiconductor layer and has a gate insulation layer on the surface thereof, and a first gate, a second gate and a third gate which are formed from the lower side of the trench gate. The first gate, the second gate and the third gate are insulated by the gate insulation layer.