Transistor, electronic device including transistor, and manufacturing methods thereof

摘要

A transistor may include an active layer having a plurality of oxide semiconductor layers and an insulating layer disposed therebetween. The insulating layer may include a material that has higher etch selectivity with respect to at least one of the plurality of oxide semiconductor layers. The electronic device may include a first transistor and a second transistor connected to the first transistor. The second transistor may include an active layer having a different structure from that of the active layer included in the first transistor. The active layer of the second transistor may have the same structure as one of the plurality of oxide semiconductor layers constituting the active layer of the first transistor.

主权项

1. A transistor comprising:
an active layer including a first oxide semiconductor layer, a second oxide semiconductor layer, and an insulating layer disposed between the first and second oxide semiconductor layers; a source contacting one end of the active layer and a drain contacting another end of the active layer; a gate corresponding to the active layer; and a gate insulating layer disposed between the active layer and the gate, wherein the first oxide semiconductor layer and the second oxide semiconductor layer include different material.