| 发明名称 |
POWER SEMICONDUCTOR DEVICE |
| 摘要 |
A power semiconductor device may include: an active region having a current flowing through a channel formed therein at the time of a turn-on operation of the power semiconductor device; a termination region formed in the vicinity of the active region; a plurality of first trenches formed lengthwise in one direction in the active region; and at least one or more second trenches formed lengthwise in one direction in the termination region. The second trench has a depth deeper than that of the first trench. |
| 申请公布号 |
US2015144993(A1) |
申请公布日期 |
2015.05.28 |
| 申请号 |
US201414292297 |
申请日期 |
2014.05.30 |
| 申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
Um Kee Ju;Song In Hyuk;Park Jae Hoon;Jang Chang Su;Oh Ji Yeon |
| 分类号 |
H01L29/06;H01L29/66;H01L29/739 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power semiconductor device comprising:
an active region having a current flowing through a channel in the active region at the time of a turn-on operation of the power semiconductor device; a termination region disposed in the vicinity of the active region; a plurality of first trenches extending lengthwise in one direction in the active region; and at least one or more second trenches extending lengthwise in one direction in the termination region, wherein the second trench has a depth deeper than that of the first trench. |
| 地址 |
Suwon-Si KR |
