| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a solid state imaging device which can maintain the transistor characteristics of a transfer transistor even if the pixel is miniaturized, while ensuring sufficient light-receiving area of a photoelectric conversion element.SOLUTION: In a solid state imaging device, a plurality of pixels each consisting of a photoelectric conversion element and a pixel transistor are arranged, the channel width of a transfer gate in a transfer transistor, out of the pixel transistors, is wider on the side closer to a floating diffusion region than the photoelectric conversion element side, the transfer gate is arranged at a corner of the photoelectric conversion element, and is formed in convex shape on the floating diffusion region side.</p> |
