| 发明名称 |
Substrate with integrated passive devices and method of manufacturing the same |
| 摘要 |
A substrate with integrated passive devices and method of manufacturing the same are presented. The substrate may include through silicon vias, at least one redistribution layer having a 1st passive device pattern and stacked vias, and an under bump metal layer having a 2nd passive device pattern. |
| 申请公布号 |
US9035457(B2) |
申请公布日期 |
2015.05.19 |
| 申请号 |
US201213689727 |
申请日期 |
2012.11.29 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Lin Chu-Fu;Lin Ming-Tse;Lin Yung-Chang |
| 分类号 |
H01L23/48;H01L23/00;H01L23/14;H01L23/498;H01L23/525;H01L23/522 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A substrate with integrated passive devices, comprising:
a substrate; at least one dielectric layer formed on said substrate; a redistribution layer formed on said at least one dielectric layer; a topmost dielectric layer formed on said at least one dielectric layer and said redistribution layer; an under bump metal layer formed directly on said topmost dielectric layer, wherein said under bump metal layer comprises a first integrated passive device pattern; and bumps formed directly on said under bump metal layer. |
| 地址 |
Hsin-Chu TW |
