Twin-well lateral silicon controlled rectifier

摘要

A LSCR includes a substrate having a semiconductor surface which is p-doped. A first nwell and a second nwell spaced apart from one another are in the semiconductor surface by a lateral spacing distance. A first n+ diffusion region and a first p+ diffusion region are in the first nwell. A second n+ diffusion region is in the second nwell. A second p+ diffusion is between the first nwell and second nwell which provides a contact to the semiconductor surface. Dielectric isolation is between the first n+ diffusion region and first p+ diffusion region, along a periphery between the first nwell and the semiconductor surface, and along a periphery between the second nwell and the semiconductor surface. A resistor provides coupling between the second n+ diffusion region and second p+ diffusion.

主权项

1. A lateral silicon controlled rectifier (LSCR), comprising:
a substrate having a semiconductor surface which is p-doped; a first nwell and a second nwell spaced apart from one another in said semiconductor surface by a lateral spacing distance; a first n+ diffusion region and a first p+ diffusion region in said first nwell, wherein the first n+ diffusion region is connected directly to a high impedance node and the first p+ diffusion region is connected directly to a pad to be protected; a second n+ diffusion region entirely in said second nwell, wherein the second n+ diffusion region is connected directly to a ground reference; a second p+ diffusion region between said first nwell and said second nwell providing a contact to said semiconductor surface; dielectric isolation between said first n+ diffusion region and said first p+ diffusion region, along a periphery of said first nwell at said semiconductor surface, and along a periphery of said second nwell at said semiconductor surface, and a resistor coupling said second n+ diffusion region to said second p+ diffusion region.