| 摘要 |
<p>PROBLEM TO BE SOLVED: To allow for easy examination whether or not the composition of the surface of a film is in normal state.SOLUTION: At first, a test object is prepared (step S20). The test object has a substrate SUB, and a first film FL1 formed on the substrate SUB. TDS is then performed while raising the temperature of the test object to 1000°C or more (step S40), and the propriety of the test object is determined by examining the presence or absence of a peak at 1000°C or more (step S60). The substrate SUB is a semiconductor substrate, e.g., a silicon substrate. The temperature rising rate is 40°C/min-80°C/min. Upper limit of the temperature of the TDS is 1300°C, for example.</p> |
