| 摘要 |
Provided is a solar cell, wherein generation of a leak current due to a contact between a p-type amorphous silicon film and an n-type amorphous silicon film is eliminated, and cell characteristics are improved. This solar cell is provided with: an n-type crystalline silicon substrate (10), which has a first main surface (11), and a second main surface (12) that is provided on the reverse side of the first main surface (11); an n-type amorphous silicon film (31) that is provided on the first main surface (11) side; and a p-type amorphous silicon film (32) that is provided on the second main surface (12) side. A slope region (31a) having the thickness thereof reduced toward an end section (31b) of the n-type amorphous silicon film (31) is formed, said end section being in the surface direction of the n-type amorphous silicon film, such that the thickness of the end section (31b) is less than a thickness (t0) of a center section in the surface direction. |
