发明名称 PLASMA CATHODE CHARGED PARTICLE LITHOGRAPHY SYSTEM
摘要 In one embodiment, a system for patterning a substrate includes a plasma chamber; a power source to generate a plasma within the plasma chamber; and an extraction plate system comprising a plurality of apertures and disposed along a side of the plasma chamber. The extraction plate system is configured to receive an extraction voltage that biases the extraction plate system with respect to the plasma chamber wherein the plurality of apertures are configured to extract a plurality of respective charged particle beamlets from the plasma. The system further includes a projection optics system to direct at least one of the plurality of charged particle beamlets to the substrate.
申请公布号 US2015123006(A1) 申请公布日期 2015.05.07
申请号 US201314070148 申请日期 2013.11.01
申请人 Varian Semiconductor Equipment Associates, Inc. 发明人 Sinclair Frank;Olson Joseph C.
分类号 H01J37/317;H01J37/32 主分类号 H01J37/317
代理机构 代理人
主权项 1. A system for patterning a substrate, comprising: a plasma chamber; a power source to generate a plasma within the plasma chamber; an extraction plate system comprising a plurality of apertures and disposed along a side of the plasma chamber, the extraction plate system configured to receive an extraction voltage that biases the extraction plate system with respect to the plasma chamber, wherein the plurality of apertures are configured to extract a plurality of respective charged particle beamlets from the plasma; and a projection optics system configured to receive the plurality of charged particle beamlets and direct at least one of the plurality of charged particle beamlets to the substrate.
地址 Gloucester MA US