发明名称 Functional material systems and processes for package-level interconnects
摘要 Interconnect packaging technology for direct-chip-attach, package-on-package, or first level and second level interconnect stack-ups with reduced Z-heights relative to ball technology. In embodiments, single or multi-layered interconnect structures are deposited in a manner that permits either or both of the electrical and mechanical properties of specific interconnects within a package to be tailored, for example based on function. Functional package interconnects may vary one of more of at least material layer composition, layer thickness, number of layers, or a number of materials to achieve a particular function, for example based on an application of the component(s) interconnected or an application of the assembly as a whole. In embodiments, parameters of the multi-layered laminated structures are varied dependent on the interconnect location within an area of a substrate, for example with structures having higher ductility at interconnect locations subject to higher stress.
申请公布号 US9024453(B2) 申请公布日期 2015.05.05
申请号 US201213976192 申请日期 2012.03.29
申请人 Intel Corporation 发明人 Sidhu Rajen S.;Dani Ashay A.;Dudek Martha A.
分类号 H01L23/48;H01L23/532;H01L23/00;H01L21/768 主分类号 H01L23/48
代理机构 Blakely, Sokoloff, Taylor & Zafman LLP 代理人 Blakely, Sokoloff, Taylor & Zafman LLP
主权项 1. An integrated electronic device, comprising: a first substrate with top level interconnect pads and a dielectric material disposed between the pads; and a first multi-layered interconnect stack disposed over a first top level interconnect pad and electrically coupled to the pad, wherein the first multi-layered interconnect stack forms a protrusion extending from the dielectric material a distance sufficient to make first contact with a second substrate, wherein the first multi-layered interconnect stack comprises a first layer of a first material and a second leer of a second material different than the first material, wherein the first material consists essentially of Sn and than second material consists essentially of Ag or comprises Ce, and wherein the first and second layers are reflowable into a composite interconnect joint.
地址 Santa Clara CA US
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