| 发明名称 | Method for preparing nano-sheet array structure of group V-VI semiconductor | ||
| 摘要 | The object of the present invention is to provide a method for preparing a nano-sheet array structure of a Group V-VI semiconductor, comprising: (A) providing an electrolyte containing a hydrogen ion and disposing an auxiliary electrode and a working electrode in the electrolyte, wherein the working electrode comprises a Group V-VI semiconductor bulk; and (B) applying a redox reaction bias to the auxiliary electrode and the working electrode to form a nano-sheet array structure on the bulk. | ||
| 申请公布号 | US9023663(B2) | 申请公布日期 | 2015.05.05 |
| 申请号 | US201414265898 | 申请日期 | 2014.04.30 |
| 申请人 | National Tsing Hua University | 发明人 | Chueh Yu-Lun;Tsai Hung-Wei;Chan Tsung-Cheng |
| 分类号 | H01L21/00;H01L35/34 | 主分类号 | H01L21/00 |
| 代理机构 | Muncy, Geissler, Olds & Lowe, P.C. | 代理人 | Muncy, Geissler, Olds & Lowe, P.C. |
| 主权项 | 1. A method for preparing a nano-sheet array structure of a Group V-VI semiconductor, comprising: (A) providing an electrolyte containing a hydrogen ion and disposing an auxiliary electrode and a working electrode in the electrolyte, wherein the working electrode comprises a Group V-VI semiconductor bulk; and (B) applying a redox reaction bias to the auxiliary electrode and the working electrode to form a nano-sheet array structure on the bulk. | ||
| 地址 | Hsinchu TW | ||