| 发明名称 | Memory device | ||
| 摘要 | According to one embodiment, a memory device includes a first electrode, a second electrode and an insulating portion. The first electrode includes an ionizable metal. The second electrode includes a conductive material. The conductive material is more difficult to ionize than the metal. The insulating portion is provided between the first electrode and the second electrode. The insulating portion is made of an insulating material. A space is adjacent to a side surface of the insulating portion between the first electrode and the second electrode. | ||
| 申请公布号 | US9024287(B2) | 申请公布日期 | 2015.05.05 |
| 申请号 | US201414453781 | 申请日期 | 2014.08.07 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Ishikawa Takayuki;Tanaka Hiroki;Fujii Shosuke |
| 分类号 | H01L45/02;H01L45/00 | 主分类号 | H01L45/02 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A memory device, comprising: a first electrode including an ionizable metal; a second electrode including a conductive material, the conductive material being more difficult to ionize than the metal; and an insulating portion provided between the first electrode and the second electrode, the insulating portion being made of an insulating material, a space being adjacent to a side surface of the insulating portion between the first electrode and the second electrode. | ||
| 地址 | Minato-ku JP | ||