| 摘要 |
<p>Disclosed herein are a light emitting diode and a method of fabricating the same. The light emitting diode includes: an n-type contact layer doped with silicon; a p-type contact layer; an active region interposed between the n-type contact layer and the p-type contact layer; a superlattice layer interposed between the n-type contact layer and the active region; an undoped intermediate layer interposed between the superlattice layer and the n-type contact layer; and an electron reinforcing layer interposed between the undoped intermediate layer and the superlattice layer. Only the final layer of the superlattice layer closest to the active region is intentionally doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer. Almost all the layers of the superlattice layer disposed close to the active region are not intentionally with silicon, thereby making it possible to reduce leakage current and the final layer closet to the active region is doped with high-concentration silicon to prevent junction characteristics from being deteriorated, thereby making it possible to improve electrostatic discharge characteristics.</p> |
