发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device including a capacitor with increased charge capacity and having a high aperture ratio and low power consumption is provided for a semiconductor device including a driver circuit. The semiconductor device includes a driver circuit which includes a first transistor including gate electrodes above and below a semiconductor film so as to overlap with the semiconductor film; a pixel which includes a second transistor including a semiconductor film; a capacitor which includes a dielectric film between a pair of electrodes in the pixel; and a capacitor line electrically connected to one of the pair of electrodes. In the semiconductor device, the gate electrode over the semiconductor film of the first transistor is electrically connected to the capacitor line.
申请公布号 US2015115265(A1) 申请公布日期 2015.04.30
申请号 US201514593216 申请日期 2015.01.09
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI Shunpei
分类号 H01L27/12;H01L29/786 主分类号 H01L27/12
代理机构 代理人
主权项 1. (canceled)
地址 Atsugi-shi JP