发明名称 Signal path of a multiple-patterned semiconductor device
摘要 A multiple-patterned semiconductor device is provided. The semiconductor device includes one or more layers with signal tracks defined by masks and a structure for transferring a signal between signal tracks and repowering the signal.
申请公布号 US9021407(B2) 申请公布日期 2015.04.28
申请号 US201313787948 申请日期 2013.03.07
申请人 International Business Machines Corporation 发明人 Allen David H.;Dewanz Douglas M.;Paulsen David P.;Sheets, II John E.
分类号 G06F17/50;G03F1/00;H01L21/033;H01L27/02;H01L23/528 主分类号 G06F17/50
代理机构 代理人 Jacobson Peder M.;Williams Robert R.
主权项 1. A method for reducing differences in path delays in a semiconductor device having a wiring layer, the wiring layer having a first signal track patterned by a first mask and processed to a first physical width and a second signal track patterned by a second mask and processed to a second physical width, wherein the first signal track is adjacent to the second signal track and physical widths defined by a single mask more closely track than physical widths defined by separate masks, comprising: routing, on a first segment of the first signal track, a first signal from a start region of the first segment of the first signal track to a finish region of the first segment of the first signal track; routing, on a first segment of the second signal track, a second signal from a start region of the first segment of the second signal track to a finish region of the first segment of the second signal track; and transferring, by criss-crossing the first signal from the finish region of the first segment of the first signal track to a start region of a second segment of the second signal track and the second signal from the finish region of the second segment of the second signal track to a start region of a second segment of the first signal track, the first signal from the first signal track to the second signal track and the second signal from the second signal track to the first signal track.
地址 Armonk NY US