发明名称 Polycrystalline Silicon Rod
摘要 A polycrystalline silicon rod is formed of polycrystalline silicon deposited radially around a silicon core line and is characterized by, in a cross-section that is a perpendicular cut in respect to the axial direction of a cylindrical rod, a ratio of surface area covered by coarse crystal particles having a diameter of 50 μm or greater is 20% or more of the crystal observed at the face, excluding the core line portion.
申请公布号 US2015107508(A1) 申请公布日期 2015.04.23
申请号 US201314383577 申请日期 2013.02.27
申请人 Tokuyama Corporation 发明人 Ishida Haruyuki;Imura Tetsuya;Aimoto Yasumasa
分类号 C30B29/66;C30B15/00;C30B11/02;C30B29/06 主分类号 C30B29/66
代理机构 代理人
主权项 1. A polycrystalline silicon rod radically depositing a polycrystalline silicon around a silicon core wire, wherein at a cross section face which is a perpendicular cut of a rod having a column shape against an axial direction, an area ratio of a coarse crystal particle having a long diameter of 50 μm or more is 20% or more among crystals observed at the face excluding the core wire part.
地址 Yamaguchi JP