发明名称 |
Polycrystalline Silicon Rod |
摘要 |
A polycrystalline silicon rod is formed of polycrystalline silicon deposited radially around a silicon core line and is characterized by, in a cross-section that is a perpendicular cut in respect to the axial direction of a cylindrical rod, a ratio of surface area covered by coarse crystal particles having a diameter of 50 μm or greater is 20% or more of the crystal observed at the face, excluding the core line portion. |
申请公布号 |
US2015107508(A1) |
申请公布日期 |
2015.04.23 |
申请号 |
US201314383577 |
申请日期 |
2013.02.27 |
申请人 |
Tokuyama Corporation |
发明人 |
Ishida Haruyuki;Imura Tetsuya;Aimoto Yasumasa |
分类号 |
C30B29/66;C30B15/00;C30B11/02;C30B29/06 |
主分类号 |
C30B29/66 |
代理机构 |
|
代理人 |
|
主权项 |
1. A polycrystalline silicon rod radically depositing a polycrystalline silicon around a silicon core wire, wherein
at a cross section face which is a perpendicular cut of a rod having a column shape against an axial direction, an area ratio of a coarse crystal particle having a long diameter of 50 μm or more is 20% or more among crystals observed at the face excluding the core wire part. |
地址 |
Yamaguchi JP |