| 发明名称 |
ELECTRONIC DEVICE |
| 摘要 |
A semiconductor device and electronic device comprising the same includes at least one dummy chip having at least one Through Silicon Via (TSV), and at least one active chip connected to the at least one dummy chip. The at least one active chip exchanges an electrical signal through the at least one TSV. The at least one active chip may be a memory chip and a non-memory chip in a vertically stacked (3D) configuration, connected through an electrical path that includes the TSV of the dummy chip. Embodiments may include multiple memory chips and dummy chips. |
| 申请公布号 |
US2015108657(A1) |
申请公布日期 |
2015.04.23 |
| 申请号 |
US201414514955 |
申请日期 |
2014.10.15 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
KIM Seijin |
| 分类号 |
H01L23/522;H01L23/00 |
主分类号 |
H01L23/522 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electronic device comprising a semiconductor device, the semiconductor device comprising:
at least one dummy chip comprising at least one Through Silicon Via (TSV); and at least one active chip connected to the at least one dummy chip, wherein the at least one active chip exchanges an electrical signal through the at least one TSV. |
| 地址 |
Gyeonggi-do KR |
