| 主权项 |
1. An apparatus for producing multicrystalline silicon ingots by an induction method, comprising:
an air-tight, one-piece, unitary, integral chamber; a water-cooled crucible located within said air-tight, one-piece, unitary, integral chamber; an inductor coil located within said air-tight, one-piece, unitary, integral chamber and surrounding said water-cooled crucible; a first movable structure located within said air-tight, one-piece, unitary, integral chamber; a first melting space formed by said water-cooled crucible and said first movable structure; a charging bin having an exit portion extending into said air-tight, one-piece, unitary, integral chamber and located and configured to download a lump silicon charge material into said first melting space; a movable, start-up heating device located within said air-tight, one-piece, unitary, integral chamber and configured to be inserted into said first melting space for melting the lump silicon charge material under the influence of radiated heat and an electromagnetic field generated by said inductor coil; said movable, start-up heating device being made of conductive material; a first movable rod extending into said air-tight, one-piece, unitary, integral chamber; said first movable rod being connected to said first movable structure for moving said first movable structure vertically within said air-tight, one-piece, unitary, integral chamber; a controlled cooling compartment located within said air-tight, one-piece, unitary, integral chamber beneath said water-cooled crucible; a first heating equipment set located within said controlled cooling compartment; said first movable structure being configured to move vertically along said first heating equipment set; a second movable structure located within said air-tight, one-piece, unitary, integral chamber; a second melting space formed by said water-cooled crucible and said second movable structure; said charging bin having said exit portion extending into said air-tight, one-piece, unitary, integral chamber and located and configured to download lump silicon charge material into said second melting space; said movable, start-up heating device located within said air-tight, one-piece, unitary, integral chamber and configured to be inserted into said second melting space for melting lump silicon charge material under the influence of radiated heat and an electromagnetic field generated by said inductor coil; a second movable rod extending into said air-tight, one-piece, unitary, integral chamber; said second movable rod being connected to said second movable structures for moving said second movable structure vertically within said air-tight, one-piece, unitary, integral chamber; a second heating equipment set located within said controlled cooling compartment; said heating equipment sets being mounted on a platform within said controlled cooling compartment located within said air-tight, one-piece, unitary, integral chamber beneath said water-cooled crucible; a rotatable axle located between said first and second heating equipment sets within said air-tight, one-piece, unitary, integral chamber; said platform being configured to rotate 180-degrees around said axle; a discharge device connected to said air-tight, one-piece, unitary, integral chamber through a gas seal; whereby a multicrystalline silicon ingot is steadily moved downwardly into said controlled cooling compartment toward an associated heating equipment set where controlled cooling is provided firstly by increasing the surface temperature of said multicrystalline silicon ingot at the output of said water-cooled crucible from 900-1150° C. to a temperature of 1200-1250° C. at an output of an upper zone of said controlled cooling compartment, and then by cooling of said multicrystalline silicon ingot with a thermal gradient of no more than 10° C./cm to remove thermal stresses. |
