发明名称 PROCESSING METHOD OF SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a processing method of a semiconductor device capable of identifying a defective point with high accuracy even for a semiconductor device before being packaged.SOLUTION: A processing method of a semiconductor device includes the following steps of: preparing a semiconductor device 1 that includes a semiconductor layer 10 having a front surface 10a and a rear surface 10b which is located in a side opposite to the front surface 10a, front surface electrodes 20 and 30 formed on the front surface 10a, and a rear surface electrode 40 formed on the rear surface 10b; polishing at least part of the rear surface electrode 40 into a curved shape protruding toward a semiconductor layer 10 side, thereby leaving part of the rear surface electrode 40 and exposing the semiconductor layer 10; and performing processing to the semiconductor device 1 from a rear surface 10b side while a terminal for input or output is connected to the rear surface electrode 40 being left.</p>
申请公布号 JP2015073022(A) 申请公布日期 2015.04.16
申请号 JP20130208220 申请日期 2013.10.03
申请人 SUMITOMO ELECTRIC IND LTD 发明人 MATSUKAWA SHINJI;YAMAMOTO YASUSHI
分类号 H01L21/336;H01L29/12;H01L29/78 主分类号 H01L21/336
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