发明名称 |
PROCESSING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a processing method of a semiconductor device capable of identifying a defective point with high accuracy even for a semiconductor device before being packaged.SOLUTION: A processing method of a semiconductor device includes the following steps of: preparing a semiconductor device 1 that includes a semiconductor layer 10 having a front surface 10a and a rear surface 10b which is located in a side opposite to the front surface 10a, front surface electrodes 20 and 30 formed on the front surface 10a, and a rear surface electrode 40 formed on the rear surface 10b; polishing at least part of the rear surface electrode 40 into a curved shape protruding toward a semiconductor layer 10 side, thereby leaving part of the rear surface electrode 40 and exposing the semiconductor layer 10; and performing processing to the semiconductor device 1 from a rear surface 10b side while a terminal for input or output is connected to the rear surface electrode 40 being left.</p> |
申请公布号 |
JP2015073022(A) |
申请公布日期 |
2015.04.16 |
申请号 |
JP20130208220 |
申请日期 |
2013.10.03 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
MATSUKAWA SHINJI;YAMAMOTO YASUSHI |
分类号 |
H01L21/336;H01L29/12;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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