| 摘要 |
PROBLEM TO BE SOLVED: To control a temperature in a predetermined place in a processing space, in which a polishing pad, etc. are arranged, within a certain range, for example, within a temperature range where a polishing rate is maximum.SOLUTION: A substrate processing device 1 of the present invention has a CMP device 10 and an exhaust flow control device 30 that is configured to allow exhausting air from a polishing space 20 in which the CMP device 10 is arranged. The exhaust flow control device 30 comprises a first exhaust line 31a, a first exhaust flow variable device 32a that can regulate exhaust flow in the first exhaust line 31a, and an exhaust control unit 33 for controlling the first exhaust flow variable device 32a. The exhaust control unit 33 has a storage device for storing exhaust flow control data calculated in advance, which is required to control a temperature in a predetermined place in the CMP device 10, for example on a polishing pad 14, within a certain range, and controls the first exhaust flow variable device 32a on the basis of the control data. |
