Solid-state image sensing device and camera

摘要

According to one embodiment, a solid-state image sensing device includes a semiconductor substrate having a first and second surface, an insulating film covering an element on the first surface, a pixel array including pixels configured to photoelectrically convert light applied on the side of the second surface, contact regions in the semiconductor substrate, one or more through-electrodes respectively provided in the contact regions, and first pads provided on the side of the second surface to correspond to the respective contact regions. The first pad extends in a first direction from the contact regions toward the pixel array.

主权项

1. A solid-state image sensing device comprising:
a semiconductor substrate including a first surface and a second surface opposite to the first surface; an insulating film covering an element on the first surface; a pixel array which is provided in the semiconductor substrate and which includes pixels configured to photoelectrically convert light applied on the side of the second surface; a plurality of contact regions provided in the semiconductor substrate; one or more through-electrodes which are respectively provided in the contact regions and which are pierced from the first surface toward the second surface; and a plurality of first pads which are provided on the side of the second surface to correspond to the respective contact regions and which extend in a first direction from the contact regions toward the pixel array, wherein the first pads comprise a power supply pad to which a power supply voltage is applied, and a test pad to which a test signal is supplied, and a number of through-electrodes connected to the power supply pad is greater than a number of through-electrodes connected to the test pad.