发明名称 MARKING METHOD FOR MONOCRYSTAL WAFER
摘要 PROBLEM TO BE SOLVED: To provide a more efficient marking method, relating to a marking method for a monocrystal wafer which is transparent and does not absorb nitrogen visible light.SOLUTION: A marking method includes a step in which an ingot of a monocrystal semiconductor which is transparent to visible light is processed in cylindrical shape, a step in which marking is made with a constant interval along a direction running from an upper surface of the ingot toward a bottom surface, and a step in which the ingot is cut along a surface that faces the upper surface and the bottom surface, between the markings.
申请公布号 JP2015062946(A) 申请公布日期 2015.04.09
申请号 JP20130199692 申请日期 2013.09.26
申请人 FUJIKURA LTD;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 SAITO MANABU;KATO TOMOHISA;MIURA TOMONORI
分类号 B23K26/00;C30B29/38 主分类号 B23K26/00
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