| 发明名称 |
METHOD OF MAKING A SEMICONDUCTOR DEVICE USING TRENCH ISOLATION REGIONS TO MAINTAIN CHANNEL STRESS |
| 摘要 |
A method for forming a complementary metal oxide semiconductor (CMOS) semiconductor device includes forming laterally adjacent first and second active regions in a semiconductor layer of a silicon-on-insulator (SOI) wafer. A stress inducing layer is formed above the first active region to impart stress thereto. Trench isolation regions are formed bounding the first active region and adjacent portions of the stress inducing layer. The stress inducing layer is removed leaving the trench isolation regions to maintain stress imparted to the first active region. |
| 申请公布号 |
US2015099335(A1) |
申请公布日期 |
2015.04.09 |
| 申请号 |
US201314048282 |
申请日期 |
2013.10.08 |
| 申请人 |
STMicroelectronics, Inc. |
发明人 |
LIU Qing;LOUBET Nicolas |
| 分类号 |
H01L21/8238;H01L27/092 |
主分类号 |
H01L21/8238 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method for forming a complementary metal oxide semiconductor (CMOS) semiconductor device comprising:
forming laterally adjacent first and second active regions in a semiconductor layer of a silicon-on-insulator (SOI) wafer; forming a stress inducing layer above the first active region to impart stress thereto; forming trench isolation regions bounding the first active region and adjacent portions of the stress inducing layer; and removing the stress inducing layer leaving the trench isolation regions to maintain stress imparted to the first active region. |
| 地址 |
Coppell TX US |
