Cell Array with a Manufacturable Select Gate for a Nonvolatile Semiconductor Memory Device

摘要

A three-dimensional integrated circuit non-volatile memory array includes a memory array with first and second NAND memory cell string stacks having opposite orientations, where each NAND memory cell string includes a plurality of transistors and a source line contact connected in series between a bit line and string extension region which extends from the source line contact and past a first self-aligned SSL gate electrode located on a peripheral end of the NAND memory cell string, and also includes a string select transistor formed with a second self-aligned SSL connected in series between the bit line and the plurality of transistors, where the first and second self-aligned SSL gate electrodes are shared between adjacent NAND memory cell strings having opposite orientations.

主权项

1. A non-volatile memory device, comprising:
a memory array comprising first and second NAND memory cell strings having opposite orientations, each NAND memory cell string comprising:
a plurality of transistors and a source line contact which are connected in series between a bit line and string extension region of said NAND memory cell string which extends from the source line contact and past a first string select line gate electrode located on a peripheral end of the NAND memory cell string, anda second string select transistor formed with a second string select line gate electrode and connected in series between the bit line and the plurality of transistors, where the first and second string select line gate electrodes are shared between adjacent NAND memory cell strings having opposite orientations.