| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit a punch-through phenomenon.SOLUTION: A semiconductor device comprises: a first n-type semiconductor layer 2, a p-type semiconductor layer 3 and a second n-type semiconductor layer 4 which are laminated on a substrate 1 in this order; a drain electrode 13 which forms ohmic junction with the first n-type semiconductor layer 2; a source electrode 11 which forms ohmic junction with the second n-type semiconductor layer 4; an opening burry part or a notch which is formed at a part of the p-type semiconductor layer 3 and a part of the second n-type semiconductor layer 4 and from a top face of the second n-type semiconductor layer 4 to reach an upper part of the first n-type semiconductor layer 2; a gate electrode 12 which is joined via a gate insulation film, to a top face of the first n-type semiconductor layer 2, lateral faces of the p-type semiconductor layer 3 and lateral faces of the second n-type semiconductor layer 4 on an inner surface of the opening burry part or a surface of the notch. The p-type semiconductor layer 3 has positive polarization charge on the first n-type semiconductor layer 2 side in a state where a voltage is not applied to any electrode. |
