发明名称 |
POLISHING MATERIAL SLURRY AND METHOD FOR MANUFACTURING SUBSTRATE USING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a polishing material slurry used in a method for manufacturing a substrate that can form a favorable epitaxial growth film thereon.SOLUTION: A polishing material slurry of the present invention contains polishing abrasive grains having a crystalline diameter of 10 nm or more and 150 nm or less and an average grain size of 0.05 μm or more and 3.0 μm or less and comprising a cerium oxide, and is used for polishing a substrate comprising a single crystal of a nitride of a group 13 element. By polishing a surface of a single crystal of a nitride of a group 13 element using the polishing material slurry, a substrate having multi-thread atomic steps extending one direction on a surface thereof is manufactured. |
申请公布号 |
JP2015065232(A) |
申请公布日期 |
2015.04.09 |
申请号 |
JP20130197232 |
申请日期 |
2013.09.24 |
申请人 |
MITSUI MINING & SMELTING CO LTD |
发明人 |
TOKUCHI NARINORI;MARUYAMA YOHEI;OSHIKA MOTOKI |
分类号 |
H01L21/304;B24B37/00;C09K3/14 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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