| 发明名称 |
Anti-fuse array of semiconductor device and method for forming the same |
| 摘要 |
An anti-fuse array of a semiconductor device and a method for forming the same are disclosed. The anti-fuse array for a semiconductor device includes a first-type semiconductor substrate formed to define an active region by a device isolation region, a second-type impurity implantation region formed in the active region, a first-type channel region isolated from the semiconductor substrate by the second-type impurity implantation region, a gate electrode formed over the channel region, and a first metal contact formed over the second-type impurity implantation region. |
| 申请公布号 |
US9000560(B2) |
申请公布日期 |
2015.04.07 |
| 申请号 |
US201313843282 |
申请日期 |
2013.03.15 |
| 申请人 |
SK Hynix Inc. |
发明人 |
Sung Min Chul |
| 分类号 |
H01L23/52;H01L23/525;H01L21/66;H01L27/112 |
主分类号 |
H01L23/52 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An anti-fuse array comprising:
a first-type semiconductor substrate formed to define an active region by a device isolation region; a second-type impurity implantation region formed in the active region; a first-type channel region isolated from the semiconductor substrate by the impurity implantation region; a gate electrode formed over the channel region; and a first metal contact formed over the second-type impurity implantation region. |
| 地址 |
Icheon KR |
