发明名称 |
METHODS AND APPARATUSES FOR FORMING MULTIPLE RADIO FREQUENCY (RF) COMPONENTS ASSOCIATED WITH DIFFERENT RF BANDS ON A CHIP |
摘要 |
A method includes forming a first gate oxide in a first region and in a second region of a wafer. The method further includes performing first processing to form a second gate oxide in the second region. The second gate oxide has a different thickness than the first gate oxide. The method also includes forming first gate material of a first device in the first region and forming second gate material of a second device in the second region. The first device corresponds to a first radio frequency (RF) band and the second device corresponds to a second RF band that is different from the first RF band. |
申请公布号 |
WO2015020786(A3) |
申请公布日期 |
2015.04.02 |
申请号 |
WO2014US47548 |
申请日期 |
2014.07.22 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
DUTTA, RANADEEP;YEAP, CHOH FEI |
分类号 |
H01L21/8234;H01L27/088;H01L27/12 |
主分类号 |
H01L21/8234 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|