SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

This substrate processing device is provided with: a processing chamber for storing and processing a plurality of substrates arranged with an interval interposed therebetween; a first nozzle for supplying a starting-material gas to the interior of the processing chamber; a second nozzle for supplying an oxidizing species generated by reacting an oxygen-containing gas and a hydrogen-containing gas with one another to the interior of the processing chamber, and positioned inside the processing chamber so as to extend in the direction in which the substrates are arranged. Therein, the lateral surface of the second nozzle has one or more gas supply holes provided only in a center section thereof which corresponds to a substrate positioned in the center section of the plurality of substrates.