发明名称 |
Charge trapping transistor |
摘要 |
<p>The device has a source section, a drain section, a gate section and a floating gate, which is arranged in an aperture in the gate section. The floating gate consists of dielectric material with fault points permitting the storage of electrons. The floating gate is formed by a nitride and the aperture passes through the gate section from above to below.</p> |
申请公布号 |
EP1341239(B1) |
申请公布日期 |
2015.04.01 |
申请号 |
EP20020004568 |
申请日期 |
2002.02.27 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
ATTI, MASSIMO;SCHULZ, THOMAS;SPECHT, MICHAEL, DR.;HOFMANN, FRANZ, DR. |
分类号 |
H01L29/792;H01L29/423 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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