Magnetoresistance element and non-volatile semiconductor storage device using same magnetoresistance element

摘要

A magnetoresistance element is disclosed. The magnetoresistance element includes a magnetic tunnel junction portion configured by sequentially stacking a perpendicularly magnetized first magnetic body, an insulation layer, and a perpendicularly magnetized second magnetic body. The second magnetic body has a configuration wherein a ferromagnetic layer and a rare earth-transition metal alloy layer are stacked sequentially from the insulation layer side interface. A heat assist layer that heats the second magnetic body with a heat generated based on a current flowing through the magnetic tunnel junction portion is further provided.

主权项

1. A magnetoresistance element comprising:
a magnetic tunnel junction portion configured by sequentially stacking a perpendicularly magnetized first magnetic body, an insulation layer, and a perpendicularly magnetized second magnetic body; and a heat assist layer that heats the first magnetic body with heat generated based on a current flowing through the magnetic tunnel junction portion; the first magnetic body having a configuration wherein a ferromagnetic layer and a rare earth-transition metal alloy layer are stacked sequentially from the insulation layer side interface; and the magnetization direction of the first magnetic body being reversed by the heating of the first magnetic body.