发明名称 SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND METHOD FOR PRODUCING OXIDE SEMICONDUCTOR THIN FILM
摘要 <p>A sputtering target including an oxide that, includes an indium element (In), a tin element (Sn), a zinc element (Zn) and an aluminum element (Al), and including a homologous structure compound represented by InAlO3ZnO)m (m is 0.1 to 10), wherein the atomic ratio of the indium element, the tin element, the zinc element and the aluminum element satisfies specific requirements.</p>
申请公布号 KR20150031440(A) 申请公布日期 2015.03.24
申请号 KR20157001016 申请日期 2013.07.17
申请人 IDEMITSU KOSAN CO., LTD. 发明人 EBATA KAZUAKI;NISHIMURA MAMI;TAJIMA NOZOMI
分类号 C23C14/08;C23C14/34;H01L21/02;H01L29/786 主分类号 C23C14/08
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