ULTRAHIGH-VOLTAGE SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

摘要

The disclosure provides an ultrahigh-voltage (UHV) semiconductor structure including a first electrical portion, a second electrical portion and a bridged conductive layer. In which, the first electrical portion and the second electrical portion are isolated, and directly connected to each other through the bridged conductive layer. Thus, there is no current leakage occurring in the UHV semiconductor structure disclosed in this disclosure. And a method for manufacturing the UHV semiconductor structure also provides herein.

主权项

1. A semiconductor structure capable of ultrahigh-voltage (UHV) operation, comprising:
a first electrical portion comprising:
a semiconductor substrate;a first semiconductor well positioned in the semiconductor substrate;a second well positioned in the first semiconductor well;a third semiconductor well and a fourth semiconductor well positioned in the second semiconductor well; anda first electrode electrically connected to the third semiconductor well; a second electrical portion comprising:
a fifth semiconductor well positioned in the semiconductor substrate;at least one semiconductor layer positioned in the fifth semiconductor well;a sixth semiconductor well and a seventh semiconductor well positioned in the fifth semiconductor well, wherein the sixth semiconductor well and the seventh semiconductor well are isolated by the semiconductor layer; anda second electrode electrically connected to the seventh semiconductor well; and a bridged conductive layer directly connected between the fourth semiconductor well of the first electrical portion and the sixth semiconductor well of the second electrical portion, wherein the first electrical portion and the second electrical portion are isolated to each other.