发明名称 Sense amplifier with adjustale back bias
摘要 <p>A circuit having a sensing circuit and at least one of a first node (VSSA) and a second node (VDDA) is described. The sensing circuit includes a pair of a first type transistors (N5,N6) and a pair of a second type transistors (P1,P2). Each transistor of the pair of the first type transistors (N5,N6) is coupled in series with a transistor of the pair of the second type transistors (P1,P2). The first node (VSSA) has a first voltage and is coupled to each bulk of each transistor of the pair of the first type transistors (N5,N6). The second node (VDDA) has a second voltage and is coupled to each bulk of each transistor of the pair of the second type transistors (P1,P2). During sensing, the first and second voltages are changed to reduce the threshold voltages of the pairs of first (N5,N6) and second (P1,P2) types of transistors, thereby increasing sensing speed.</p>
申请公布号 EP2418647(B1) 申请公布日期 2015.03.18
申请号 EP20100187911 申请日期 2010.10.18
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 KATOCH, ATUL
分类号 G11C11/4091 主分类号 G11C11/4091
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