Techniques for providing a direct injection semiconductor memory device

摘要

Techniques for providing a direct injection semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as a direct injection semiconductor memory device including a first region connected to a bit line extending in a first orientation and a second region connected to a source line extending in a second orientation. The direct injection semiconductor memory device may also include a body region spaced apart from and capacitively coupled to a word line extending in the second orientation, wherein the body region is electrically floating and disposed between the first region and the second region. The direct injection semiconductor memory device may further include a third region connected to a carrier injection line extending in the second orientation, wherein the first region, the second region, the body region, and the third region are disposed in sequential contiguous relationship.

主权项

1. A direct injection semiconductor memory device comprising:
a first region electrically connected to a bit line; a second region electrically connected to a source line; a body region spaced apart from and capacitively coupled to a word line, wherein the body region is electrically floating and disposed between the first region and the second region; a third region electrically connected to a carrier injection line, wherein the first region, the second region, the body region, and the third region are disposed in sequential contiguous relationship such that the second region is disposed between the body region and the third region, wherein the first region, the body region, and the second region forms a first bipolar junction transistor, and wherein the body region, the second region, and the third region forms a second bipolar junction transistor.