Method for manufacturing nonvolatile memory device

摘要

According to one embodiment, a method for manufacturing a nonvolatile memory device including a plurality of memory cells is disclosed. Each of the plurality of memory cells includes a base layer including a first electrode, a magnetic tunnel junction device provided on the base layer, and a second electrode provided on the magnetic tunnel junction device. The magnetic tunnel junction device includes a first magnetic layer, a tunneling barrier layer provided on the first magnetic layer, and a second magnetic layer provided on the tunneling barrier layer. The method can include etching a portion of the second magnetic layer and a portion of the first magnetic layer by irradiating gas clusters onto a portion of a surface of the second magnetic layer or a portion of a surface of the first magnetic layer.

主权项

1. A method for manufacturing a nonvolatile memory device including a plurality of memory cells,
each of the plurality of memory cells including:
a base layer including a first electrode;a magnetic tunnel junction device provided on the base layer; anda second electrode provided on the magnetic tunnel junction device, the magnetic tunnel junction device including:
a first magnetic layer;a tunneling barrier layer provided on the first magnetic layer; anda second magnetic layer provided on the tunneling barrier layer, the method comprising etching a portion of the second magnetic layer and a portion of the first magnetic layer by irradiating gas clusters onto a portion of a surface of the second magnetic layer or a portion of a surface of the first magnetic layer while reducing voltage accelerating the gas cluster ions.