发明名称 MEMORY DEVICE COMPRISING TILES WITH SHARED READ AND WRITE CIRCUITS
摘要 A memory device comprising a plurality of simultaneously programmable banks, each bank comprising a plurality of memory tiles, each memory tile divided into a plurality of sub-tiles and a multi-level column and a multi-level row select for the plurality of memory tiles.
申请公布号 US2015071020(A1) 申请公布日期 2015.03.12
申请号 US201414186437 申请日期 2014.02.21
申请人 Sony Corporation 发明人 Javanifard Jahanshir
分类号 G11C8/12;G11C8/10 主分类号 G11C8/12
代理机构 代理人
主权项 1. A memory device comprising: a plurality of simultaneously programmable banks, each bank comprising a plurality of memory tiles, each memory tile divided into a plurality of sub-tiles; and a multi-level column and a multi-level row select for the plurality of memory tiles.
地址 Tokyo JP
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